MOSFET, DUAL, P, SMD, 8-SOIC; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):55mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5A; Package / Case:SOIC; Power Dissipation Pd:1.6W; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V
This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V - 25V).