サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
関連部品
onsemiNTMD6601NR2G
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 15nC @ 10V 1.1A 600mW 80V
説明
onsemi FDS3601の詳細は販売業者から提供されます。
MOSFET 2N-CH 100V 1.3A 8SOIC
100V/20V, 480/530MO, NCH, DUAL, SO8, 600A GOX, PTI
Power Field-Effect Transistor, 1.3A I(D), 100V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These N-Channel MOSFETs have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight230.4 mg
Technical
Continuous Drain Current (ID)1.3 A
Current Rating1.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance530 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance153 pF
Max Operating Temperature175 °C
Max Power Dissipation2 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2 W
Rds On Max480 mΩ
Rise Time4 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)100 V
Dimensions
Height1.5 mm
Length5 mm
Width4 mm