関連部品
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N-channel 100 V, 0.027 Ohm typ., 25 A STripFET F7 Power MOSFET in TO-220 package
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N-channel 100 V, 0.02 Ohm typ., 24 A STripFET F7 Power MOSFET in a TO-220FP package
説明
onsemi FDPF3860TYDTUの詳細は販売業者から提供されます。
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel PowerTrench® MOSFET 100V, 20A, 38.2mΩ
33.8W(Tc) 20V 4.5V@ 250µA 35nC@ 10V 1individualNChannel 100V 38.2mΩ@ 5.9A,10V 20A 1.8nF@25V TO-220F-3，Y-FORMING Through hole mounting 10.67mm*4.7mm*16.3mm
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight2.565 g
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage100 V
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation33.8 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation33.8 W
Rds On Max38.2 mΩ
Rise Time17 ns
Turn-Off Delay Time24 ns