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製造元 onsemi FDP75N08A のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
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|---|---|---|---|
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サプライチェーン
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-05-31
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
関連部品
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MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de
InfineonIRF2807ZPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg
InfineonIRF2807PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S
説明
onsemi FDP75N08Aの詳細は販売業者から提供されます。
N-Channel Power MOSFET, UniFETTM, 75 V, 75 A, 11 mΩ, TO-220
Trans MOSFET N-CH 75V 75A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 75 V 11 mOhm Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 75A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:75A; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:75V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:137W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:3437pF; Current Id Max:75A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.91°C/W; On State Resistance Max:11mohm; On State Resistance Typ:9.4mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:137W; Power Dissipation Pd:137W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current75 A
Current Rating75 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance11 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time147 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.468 nF
Max Operating Temperature150 °C
Max Power Dissipation137 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation137 W
Rds On Max11 mΩ
Resistance11 MΩ
Rise Time212 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time273 ns
Turn-On Delay Time43 ns
Voltage75 V
Voltage Rating (DC)75 V
Dimensions
Height9.4 mm
Length10.67 mm
Width4.83 mm