サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-12-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
関連部品
InfineonBSC100N06LS3GATMA1
MOSFET, N-CH, 60V, 50A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain
説明
onsemi FDMS86320の詳細は販売業者から提供されます。
PT7 80V/20V NCH POWERTRENCH MOSFET - 8LD,PQFN,JEDEC MO-240 AA,5.0X6.0MM
N-Channel PowerTrench® MOSFET 80V, 44A, 11.7mΩ
N-Channel 80 V 11.7 mO 41 nC SMT PowerTrench® Mosfet - POWER 56
Power Field-Effect Transistor, 10.5A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight74 mg
Technical
Continuous Drain Current (ID)10.5 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance11.7 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.64 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation69 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max11.7 mΩ
Rise Time8 ns
Schedule B8541290080
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Dimensions
Height1.1 mm
Length5 mm
Width6 mm