onsemi FDMS86202の詳細は販売業者から提供されます。
N-Channel Shielded Gate PowerTrench® MOSFET 120V, 64A, 7.2mΩ
Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemi N-Ch PowerTrench MOSFET, Vds=120V, Id=64A, PQFN8, SMD, 8-Pin
N-Channel 120 V 64 A 7.2 mOhm PowerTrench Mosfet - Power-56
PT5 120/20V Nch Power Trench MOSFET - 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.
MOSFET, N-CH, 120V, 64A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 64A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.006ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Powe
Embedded - Microcontrollers 1 (Unlimited) 20-LSSOP (0.173, 4.40mm Width) 13 384 x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tube 16-Bit MCU 16-bit R8C CISC 4KB Flash 3.3V/5V 20-Pin LSSOP Tube
This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet maintain superior switching performance.