サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-01-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-06-01
LTD Date2011-12-01
説明
onsemi FDMC8676の詳細は販売業者から提供されます。
Trans MOSFET N-CH 30V 16A 8-Pin Power 33 T/R
30V N-Channel PowerTrench® MOSFET
Power Field-Effect Transistor, 16A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 16A/18A POWER33
16A, 30V, 0.0059OHM, N-CHANNEL P
This device has been designed specifically to improve theefficiency of DC/DC converters. Using new techniques inMOSFET construction, the various components of gate chargeand capacitance have been optimized to reduce switchinglosses. Low gate resistance and very low Miller charge enableexcellent performance with both adaptive and fixed dead timegate drive circuits. Very low rDS(on) has been maintained toprovide an extremely versatile device.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)16 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.935 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation41 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max5.9 mΩ
Rise Time3 ns
Turn-Off Delay Time22 ns
Turn-On Delay Time9 ns
Dimensions
Height1.1 mm