サプライチェーン
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Power MOSFET, N Channel, 150 V, 2.7 A, 85 MilliOhms, NSOIC, 8 Pins, Surface Mount
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Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) | MOSFET N-CH 150V 3.6A 8-SOIC
説明
onsemi FDMC86248の詳細は販売業者から提供されます。
MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Curre
N-Channel Power Trench® MOSFET 150V, 13A, 90mΩ
FAIRCHILD SEMICONDUCTOR FDMC86248 MOSFET Transistor, N Channel, 13 A, 150 V, 0.069 ohm, 10 V, 3.2 V
Power Field-Effect Transistor, 3.4A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N-CH, 150V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.069ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)3.4 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time2.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance525 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs3.2 V
Number of Channels1
Number of Elements1
Power Dissipation2.3 W
Rds On Max90 mΩ
Rise Time1.4 ns
Turn-Off Delay Time11 ns
Turn-On Delay Time6.9 ns
Dimensions
Height1.1 mm
Length3.3 mm
Width3.3 mm