onsemi FDMC8588

Single N-Channel 25 V 6.9 mOhm 17 nC 2.4 W PowerTrench SMT Mosfet - POWER 33-8
$ 0.406
Production
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DistributorSKUMinPkg
Avnet
2
FDMC85881,011,0001773
8h
Verical
4
FDMC85883,000767
Rochester Electronics
2
FDMC85883,445,291
6h
Flip ElectronicsFDMC85881,011,000
>1wk
FarnellFDMC858803KTape & Reel
5h

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onsemi FDMC8588のデータシートとメーカー資料をダウンロードする。

onsemi

Datasheet8ページ2年前
Datasheet0ページ0年前
Datasheet0ページ0年前

IHS

Farnell

Fairchild Semiconductor

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Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-07
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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説明

onsemi FDMC8588の詳細は販売業者から提供されます。

Single N-Channel 25 V 6.9 mOhm 17 nC 2.4 W PowerTrench SMT Mosfet - POWER 33-8
Future Electronics
TAPE REEL/PT8 Thin gate, 25/12V, Nch Mosfet in PQFN33
Newark
N-Channel PowerTrench® MOSFET 25V, 40A, 5.7mΩ
onsemi
Trans MOSFET N-CH 25V 16.5A 8-Pin Power 33 T/R
Verical
Power Field-Effect Transistor, 16.5A I(D), 25V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
IHS
POWER FIELD-EFFECT TRANSISTOR, 1
ODG (Origin Data Global)
MOSFET N-CH 25V 16.5A/40A PWR33
Easev
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed and body diode reverse recovery performance.
Fairchild Semiconductor

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LZChips
Future Electronics
Rochester Electronics

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