サプライチェーン
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-01-15
Lifecycle StatusObsolete (Last Updated: 6 days ago)
LTB Date2020-01-16
LTD Date2020-07-16
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)
関連部品
InfineonIPI100N04S4H2AKSA1
MOSFET N-CH 40V 100A TO262-3 N-Channel 40 V 100A (Tc) 115W (Tc) Through Hole PG-TO262-3
InfineonIPI80N04S403AKSA1
MOSFET N-CH 40V 80A TO262-3 N-Channel 40 V 80A (Tc) 94W (Tc) Through Hole PG-TO262-3
InfineonIPI80N04S404AKSA1
MOSFET N-CH 40V 80A TO262-3 N-Channel 40 V 80A (Tc) 71W (Tc) Through Hole PG-TO262-3
説明
onsemi FDI9409-F085の詳細は販売業者から提供されます。
PowerTrench® MOSFET, N-Channel, 40V, 80A, 3.8mΩ
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) I2PAK Tube
Power Field-Effect Transistor, 80A I(D), 40V, 0.0038ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET, TO-262AA
MOSFET N-Channel Power Trench MOSFET
N-Channel Powertrench Mosfet / Rail
FDI9409 - N-CHANNEL POWERTRENCH
94W(Tj) 20V 4V@ 250µA 56nC@ 10V 1individualNChannel 40V 3.8mΩ@ 80A,10V 80A 2.98nF@25V I2PAK，TO-262 Through hole mounting 10.29mm*4.83mm*7.88mm
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Weight2.084 g
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance3.8 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Input Capacitance2.98 nF
Max Operating Temperature175 °C
Max Power Dissipation94 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max3.8 mΩ
Schedule B8541290080