MOSFET, DUAL, NP, SMD, 6-SC-70; Transistor Polarity:N and P Channel; Continuous Drain Current Id:220mA; Drain Source Voltage Vds:25V; On Resistance Rds(on):4ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Power Dissipation Pd:300mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:220mA; Package / Case:SC-70; Power Dissipation Pd:300mW; Termination Type:SMD; Voltage Vds Typ:25V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V
These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values.