onsemi FDFMA2N028Z

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
$ 0.262
Obsolete
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Rochester Electronics
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FDFMA2N028Z33,000
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Win SourceWS-FDFMA2N028Z3,000660
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Worldway ElectronicsFDFMA2N028Z25,3387Tape & Reel
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Fmall Co., LimitedFDFMA2N028Z36,220
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Datasheet0ページ0年前
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Fairchild Semiconductor

onsemi

Farnell

DigiKey

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Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-04
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

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説明

onsemi FDFMA2N028Zの詳細は販売業者から提供されます。

Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
onsemi
20V,3.7A,68 OHM, NCH POWER TRENCH MOSFET & SCHOTTKY DIODE
Future Electronics
Trans MOSFET N-CH 20V 3.7A 6-Pin MicroFET EP T/R
Verical
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
MOSFET, N-CH, 20V, 3.7A, UFET-6
element14 APAC
20V 3.7A 68 O Nch Er Tre Rohs Compliant: Yes
Newark
MOSFET 20V N-Ch PT MFET SCHOTTKY
Fly-Wing Technology
MOSFET N-CH 20V 3.7A 6MICROFET
DigiKey
MOSFETs 20V N-Ch PT MFET_SCHOTTKY
Mouser
SMALL SIGNAL FIELD-EFFECT TRANSI
DigiKey Marketplace
This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra–portable applications. It features a MOSFET with low on–state resistance, and an independently connected schottky diode with low forward voltage. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Fairchild Semiconductor

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Farnell
Augswan
Future Electronics
Rochester Electronics
LZChips

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部品番号の別名

こちらの部品は、以下の代替部品番号で知られている場合があります：

  • FDFMA2N028Z.