MOSFET, N-CH, 60V, 136A, 127W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 136A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.