価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDD6780A | 2,708 | 494 | |||||||||
| Rochester Electronics | FDD6780A | 26,550 | 2h | |||||||||
| Component Stockers USA | FDD6780A | 58,341 | 16h | |||||||||
| Win Source | WS-FDD6780A | 17,900 | 215 | 3h | ||||||||
| Worldway Electronics | FDD6780A | 10,727 | 7 | Tape & Reel | 2h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-02-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTD Date2017-10-22
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2.7W(Ta),46W(Tc) 20V 3V@ 250¦ÌA 40nC@ 10 V 1P 60V 60m¦¸@ 10A,10V 19A 1.71nF@25V TO-252AA 2.39mm
説明
onsemi FDD6780Aの詳細は販売業者から提供されます。
N-Channel 25 V 8.6 mOhm Surface Mount PowerTrench Mosfet - TO-252-3
Trans MOSFET N-CH 25V 16.4A 3-Pin(2+Tab) DPAK T/R
25V N-Channel PowerTrench® MOSFET
Power Field-Effect Transistor, 16.4A I(D), 25V, 0.0086ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
16.4A, 25V, 0.0086OHM, N-CHANNEL
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)16.4 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance8.6 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.235 nF
Max Operating Temperature175 °C
Max Power Dissipation32.6 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.7 W
Rds On Max8.6 mΩ
Resistance8.6 MΩ
Rise Time3 ns
Turn-Off Delay Time16 ns
Turn-On Delay Time7 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm