サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-09-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-24
LTD Date2013-05-24
関連部品
InfineonIRLR8726TRLPBF
N CH POWER MOSFET, HEXFET, 30V, 86A, DPAK; Transistor Polarity:N Channel; Contin
説明
onsemi FDD6682の詳細は販売業者から提供されます。
30V N-Channel PowerTrench® MOSFET
N-Channel 30V 75A (Ta) 71W (Ta) Surface Mount D-PAK (TO-252AA)
30V/16V, 7.5/9MO, NCH, SINGLE, DPAK, 400A GOX, PTIII
Power Field-Effect Transistor, 75A I(D), 30V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.2 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.4 nF
Max Operating Temperature175 °C
Max Power Dissipation71 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation71 W
Rds On Max6.2 mΩ
Rise Time12 ns
Turn-Off Delay Time38 ns