サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-01-31
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-09-23
LTD Date2011-03-23
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説明
onsemi FDD5810の詳細は販売業者から提供されます。
TRANS MOSFET N-CH 60V 7.7A 3PIN DPAK
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET N-CH 60V 7.4A/37A DPAK
N-CHANNEL POWER MOSFET
MOSFETs LOW_VOLTAGE
MISCELLANEOUS MOSFETS;
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:7.4A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):43mohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:1.6V; Power Dissipation, Pd:72W ;RoHS Compliant: Yes
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-252
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)7.7 A
Current Rating35 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time34 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.89 nF
Max Operating Temperature175 °C
Max Power Dissipation72 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation88 W
Rds On Max22 mΩ
Rise Time75 ns
Turn-Off Delay Time26 ns
Voltage Rating (DC)60 V