価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDB8453LZ | 1,600 | 355 | |||||||||
| Rochester Electronics | FDB8453LZ | 1,703 | 4h | |||||||||
| Microchip USA | FDB8453LZ | 341 | 300 | Bulk | 2d | |||||||
| Win Source | WS-FDB8453LZ | 103 | 70 | 5h | ||||||||
| Worldway Electronics | FDB8453LZ | 28,564 | 7 | Bulk | 2d |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-08-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-24
LTD Date2013-05-24
関連部品
InfineonIPB70N04S406ATMA1
40V, N-Ch, 6.2 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
InfineonIPB80N04S306ATMA1
40V, N-Ch, 5.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHS
VishaySUM90N04-3M3P-E3
Single N-Channel 40 V 0.0033 O 87 nC Surface Mount Power Mosfet - TO-263 (D2PAK)
説明
onsemi FDB8453LZの詳細は販売業者から提供されます。
TAPE REEL / 40V, 50A, 7.0 M OHMS, NCH POWER TRENCH MOSFET
Trans MOSFET N-CH 40V 16.1A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 50A I(D), 40V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)50 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.545 nF
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max7 mΩ
Rise Time6 ns
Turn-Off Delay Time37 ns