価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDB14AN06LA0_F085 | 3,200 | 235 | |||||||||
| Rochester Electronics | FDB14AN06LA0-F085 | 3,200 | 17h | |||||||||
| Farnell | FDB14AN06LA0-F085 | 0 | 800 | Tape & Reel | 18h | |||||||
| Win Source | WS-774457 | 9,000 | 30 | 18h | ||||||||
| Worldway Electronics | FDB14AN06LA0_F085 | 21,816 | 7 | 17h |
サプライチェーン
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-12-15
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-01-08
LTD Date2022-07-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
関連部品
InfineonAUIRF1010EZS
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
説明
onsemi FDB14AN06LA0-F085の詳細は販売業者から提供されます。
MOSFET N-CH 60V 67A D2PAK / Trans MOSFET N-CH 60V 10A Automotive 3-Pin(2+Tab) D2PAK T/R
N-Channel PowerTrench® MOSFET, 60V, 60A, 14.6mΩ,
Nmos D2Pak 60V 11.6 Mohm/Reel Rohs Compliant: Yes |Onsemi FDB14AN06LA0-F085
Power Field-Effect Transistor, 10A I(D), 60V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
60V 60A 10.2m´Î@10V67A 125W 3V@250uA 115pF@25V N Channel 2.9nF@25V 24nC@5V -55¡Í~+175¡Í@(Tj) TO-263AB MOSFETs ROHS
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.9 nF
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rds On Max11.6 mΩ
Rise Time169 ns
Turn-Off Delay Time24 ns
Turn-On Delay Time15 ns