onsemi FCPF190N60

N-Channel Power MOSFET, SUPERFET® II, FAST, 600V, 20.2A, 199mΩ, TO-220F

Trans MOSFET N-CH 600V 20.2A 3-Pin(3+Tab) TO-220FP Rail

Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH, 600V, 20.2A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

SuperFET®II MOSFET is Fairchild’s brand-new high voltage super-junction MOSFET family, utilizes advanced charge-balance technology for outstandingly low on-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dv/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.