onsemi EMD4DXV6T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital

Trans Digital BJT NPN/PNP 50V 100mA 500mW 6-Pin SOT-563 T/R

Complementary Bipolar Digital Transistor (BRT)

250mV@ 300¦ÌA,10mA 1 NPN,1 PNP - Pre-Biased (Dual) 500mW 500nA 50V 100mA SOT-563 1.6mm*1.2mm*550¦Ìm

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Brt Transistor, 50V, 47K/10Kohm, Sot-553; Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm Rohs Compliant: Yes |Onsemi EMD4DXV6T1G

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the EMD4DXV6T1 series two complementary BRT devices are housed in the SOT-563 package which is ideal for low power surface mount applications where board space is at a premium.