TRANSISTOR, JFET, N, SOT-23; Zero Gate Voltage Drain Current Idss:4mA to 10mA; Gate-Source Cutoff Voltage Vgs(off) Max:5V; Power Dissipation Pd:225mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Max:5pF; Current Idss Max:10mA; Current Idss Min:4mA; Drain Source Voltage Vds:25V; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:225mW; SMD Marking:M1; Termination Type:SMD; Transistor Polarity:N Channel