サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1974-01-09
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2011-09-14
LTD Date2012-03-14
説明
onsemi BC183の詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN
100 mA 30 V NPN Si SMALL SIGNAL TRANSISTOR TO-92
TRANSISTOR, NPN, TO-92; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:30V; Current Ic Continuous a Max:200mA; Voltage, Vce Sat Max:0.25V; Power Dissipation:350mW; Min Hfe:125; ft, ;RoHS Compliant: Yes
TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: -; Power Dissipation Pd: 350mW; DC Collector Current: 100mA; DC Current Gain hFE: 40hFE; Transistor Case Style:
TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:80; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:2mA; Device Marking:BC183; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:240MHz; Hfe Min:125; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Voltage Vcbo:45V
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight200 mg
Technical
Collector Base Voltage (VCBO)45 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product150 MHz
hFE Min80
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
TerminationThrough Hole
Transition Frequency150 MHz
Voltage Rating (DC)30 V
Dimensions
Height7.87 mm