価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | BC182LB | 10 | 3h | |||||||||
| element14 APAC | BC182LB | 0 | 5 | 17h | ||||||||
| Farnell | BC182LB. | 0 | 5 | 1d | ||||||||
| Win Source | WS-BC182LB | 20 | 130 | 4h | ||||||||
| Worldway Electronics | BC182LB | 19,309 | 7 | Bulk | 3h |
CADモデル
製造元 onsemi BC182LB のシンボル、フットプリント、3D STEPモデルを信頼できるパートナーからダウンロードする
| ソース | eCAD | mCAD | ファイル |
|---|---|---|---|
 EE Concierge | シンボルフットプリント | ||
 Ultra Librarian | シンボルフットプリント | ダウンロード |
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サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2002-03-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
onsemi BC182LBの詳細は販売業者から提供されます。
Bipolar (BJT) Single Transistor, NPN, 50 V, 500 mA, 350 mW, TO-92, Through Hole
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 10muA 5V 100mA 350mW 150MHz
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
NPN General Purpose Amplifer Product Highlights: This device is designed for general purpose amplifier application at collector currents to 100mA. Sourced from process 10.
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):40; Package/Case:TO-92; C-E Breakdown Voltage:50V; DC Collector Current:0.5A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transistor Case Style: TO-92; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic M
TRANSISTOR, NPN, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:350mW; DC Collector Current:500mA; DC Current Gain hFE:80; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:250mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:2mA; Device Marking:BC182LB; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:240; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:a; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:625mW; Termination Type:Through Hole; Voltage Vcbo:60V
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency150 MHz
Gain Bandwidth Product150 MHz
hFE Min80
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation350 mW
TerminationThrough Hole
Transition Frequency150 MHz
Voltage Rating (DC)50 V
Dimensions
Height4.78 mm
Length6.35 mm
Width6.35 mm