価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | 2SK3746 | 3,669 | 82 | |||||||||
| Rochester Electronics | 2SK3746 | 3,669 | 1d | |||||||||
| Microchip USA | 2SK3746 | 145 | 150 | Tray | 4h | |||||||
| Win Source | WS-2SK3746 | 7,000 | 12 | 12h | ||||||||
| Worldway Electronics | 2SK3746 | 25,584 | 7 | Bulk | 11h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
関連部品
STMicroelectronicsSTP1N105K3
N-channel 1050 V, 8 Ohm typ., 1.4 A SuperMESH3(TM) Power MOSFET in TO-220 package
説明
onsemi 2SK3746の詳細は販売業者から提供されます。
Tray Through Hole N-Channel Single Mosfet Transistor 2A Ta 2A 2.5W 59ns
High-Voltage, High-Speed Switching Applications | MOSFET N-CH 1500V 2A TO-3PB
Trans MOSFET N-CH 1.5KV 2A 3-Pin(3+Tab) TO-3PB
Power Field-Effect Transistor, 2A I(D), 1500V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, TO-3PB; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:1.5kV; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:2.5W; Transistor Case Style:TO-3PB; No. of Pins:3; Current Id Max:2A; Package / Case:TO-3PB; Power Dissipation Pd:100W; Power Dissipation Pd:2.5W; Pulse Current Idm:4A; Termination Type:Through Hole; Voltage Vds Typ:1.5kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
メーカーの別名
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2 A
Drain to Source Breakdown Voltage1.5 kV
Drain to Source Resistance13 Ω
Drain to Source Voltage (Vdss)1.5 kV
Dual Supply Voltage1.5 kV
Element ConfigurationSingle
Fall Time59 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance380 pF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage1.5 kV
Min Operating Temperature-55 °C
Nominal Vgs3.5 V
Number of Elements1
Power Dissipation2.5 W
Rds On Max13 Ω
Rise Time37 ns
TerminationThrough Hole
Turn-Off Delay Time152 ns
Turn-On Delay Time12 ns