サプライチェーン
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1987-01-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2006-12-31
LTD Date2007-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
関連部品
onsemi2N5639RLRAG
310mW 1individualNChannel 30V 60Ω 25mA 10pF @ 12V (VGS) 35V TO-92-3 Through hole mounting
onsemi2N5638RLRA
310mW 1individualNChannel 30V 30Ω 50mA 10pF @ 12V (VGS) 35V TO-92-3 Through hole mounting
onsemi2N5638RLRAG
310mW 1individualNChannel 30V 30Ω 50mA 10pF @ 12V (VGS) 35V TO-92-3 Through hole mounting
説明
onsemi 2N5639の詳細は販売業者から提供されます。
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-92
30 V N-CHANNEL Si SMALL SIGNAL JFET TO-92
310mW N-Channel 25mA@20V 60Ω 35V TO-92 JFETs ROHS
350mW 310mW 30V 1individualNChannel 30V 60Ω 25mA 10pF @ 12V (VGS) 35V TO-92-3 Through hole mounting 5.33mm(height)
Small Signal NPN Bipolar Transistor. ONSSPCTRNSTSK7C1K;
JFETs 30V 10mA No-Cancel/No-Return
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-35V; Zero Gate Voltage Drain Current Min, Idss:25mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:10mA; Leaded Process Compatible:No RoHS Compliant: No
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Breakdown Voltage-30 V
Continuous Drain Current (ID)25 mA
Current Rating10 mA
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance60 Ω
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)-30 V
Input Capacitance10 pF
Max Operating Temperature150 °C
Max Power Dissipation310 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation310 mW
Voltage Rating (DC)30 V