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Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)
関連部品
onsemi2N5088RLRAG
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
説明
onsemi 2N5088G.の詳細は販売業者から提供されます。
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 300 @ 100muA 5V 50nA ICBO 625mW 50MHz
Low Noise NPN Bipolar Transistor, TO-92 30 V, 50 mA
Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Trans GP BJT NPN 30V 0.05A 625mW 3-Pin TO-92 Box
Amplifier Transistors NPN Silicon | TRANS NPN 30V 0.05A TO92
Amplifier Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Collector Emitter Saturation Voltage, Vce(sat):300V; Power Dissipation, Pd:0.625W; DC Current Gain Min (hfe):300; Package/Case:TO-92 ;RoHS Compliant: Yes
TRANSISTOR, NPN, 30V, 0.05A, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:625mW; DC Collector Current:50mA; DC Current Gain hFE:50; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:300V; Current Ic Continuous a Max:50mA; DC Current Gain Hfe Max:900; Gain Bandwidth ft Typ:50MHz; Hfe Min:300; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole; Transistor Type:General Purpose
メーカーの別名
onsemiは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 onsemi は以下の名前でも知られているかもしれません：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技術仕様
Physical
Case/PackageTO-92
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)35 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4.5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min350
Max Collector Current50 mA
Max Frequency50 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation625 mW
Schedule B8541210080
Transition Frequency50 MHz
Voltage Rating (DC)30 V
Dimensions
Height5.33 mm
Length19.05 mm
Width6.35 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
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