サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date2004-05-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-07-01
LTD Date2012-06-30
関連部品
NXP SemiconductorsMRF6S18060NR1
GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V
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RF Power Transistor,470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
説明
NXP Semiconductors MRF5S9101NR1の詳細は販売業者から提供されます。
Trans MOSFET N-CH 68V 4-Pin TO-270 WB EP T/R
UHF BAND Si N-CHANNEL RF POWER MOSFET TO-270AA
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270
RF ULTRA HIGH FREQUENCY BAND, N-
メーカーの別名
NXP Semiconductorsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NXP Semiconductors は以下の名前でも知られているかもしれません：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技術仕様
Physical
Case/PackageTO-270-4
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight1.634945 g
Technical
Continuous Drain Current (ID)700 mA
Current Rating700 mA
Drain to Source Breakdown Voltage68 V
Drain to Source Voltage (Vdss)68 V
Element ConfigurationSingle
Frequency960 MHz
Gain17.5 dB
Gate to Source Voltage (Vgs)15 V
Max Operating Temperature200 °C
Max Power Dissipation427 W
Min Breakdown Voltage68 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power100 W
PackagingCut Tape
Power Dissipation427 W
Test Current700 mA
Test Voltage26 V
Voltage Rating68 V
Voltage Rating (DC)26 V