サプライチェーン
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00
Introduction Date2013-12-19
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2024-12-30
LTD Date2025-06-30
関連部品
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Lateral N-Channel Broadband RF Power MOSFET, 10-450 MHz, 10 W, 50 V, FM2F
NXP SemiconductorsMRFE6VS25NR1
RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732
説明
NXP Semiconductors MMRF1304NR1の詳細は販売業者から提供されます。
Wideband RF Power LDMOS Transistor, 1.8 - 2000 MHz, 25 W, 50 V/ REEL RoHS Compliant: Yes
RF Power Transistor,1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732
Transistor RF FET N-CH 133V 1.8MHz to 2000MHz 2-Pin TO-270G T/R
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-270AA
MMRF1304 - WIDEBAND RF POWER LDM
メーカーの別名
NXP Semiconductorsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NXP Semiconductors は以下の名前でも知られているかもしれません：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技術仕様
Physical
Case/PackageTO-270-2
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Frequency512 MHz
Gain24 dB
Gate to Source Voltage (Vgs)10 V
Max Operating Temperature225 °C
Min Breakdown Voltage133 V
Min Operating Temperature-40 °C
Number of Elements1
Output Power25 W
PackagingTape & Reel (TR)
Test Current10 mA
Test Voltage50 V
Voltage Rating133 V