サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-09-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
関連部品
NXP SemiconductorsPDTC143XE,115
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHMDTC143ZUAT106
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
ROHMDTC123EUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
説明
NXP Semiconductors BC847AT,115の詳細は販売業者から提供されます。
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
BC847 series - 45 V, 100 mA NPN general-purpose transistors
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
メーカーの別名
NXP Semiconductorsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NXP Semiconductors は以下の名前でも知られているかもしれません：
- NXP
- PHILIPS
- PHIL
- NXP USA Inc
- PHI
- PHILLIPS
- NXP SEMI
- NXP SEMICONDUCTOR
- PHILIPS/NXP
- PHILIPS SEMICONDUCTORS
- PHILIP
- NXP/PHILIPS
- PHILIPS SEMICONDUCTOR
- PHILPS
- PHILIPS COMPONENTS
- PHILIPS SEMI
- PHL
- PHLIPS
- NXP Semicon
- NXP / Freescale
- PHILL
- PHILIPS ECG
- Philips Semiconducto
- PHILLIP
- PHILI
- Philips Semiconductors
- NXP Semiconductors NV
- NXP
技術仕様
Physical
Case/PackageSC
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min110
Max Breakdown Voltage45 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Power Dissipation150 mW
Transition Frequency100 MHz
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
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