NXP Semiconductors AFV10700HR5の詳細は販売業者から提供されます。
Airfast RF Power LDMOS Transistor, 700 W Pulse over 960-1215 MHz, 52 V, CFM4F, RoHS
NXP Semiconductors SCT
AIRFAST RF POWER LDMOS TRANSISTORS 1030-1090 MHz, 700 W PEAK, 50 V
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
RF Power Transistor, 1.03 to 1.09 GHz, 700 W, Typ Gain in dB is 19.2 @ 1030 MHz, 52 V, SOT1827-1, LDMOS
Transistor RF FET N-CH 105V 4-Pin NI-780H T/R
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
RF MOSFET LDMOS DL 50V NI-780-4
Transistor, Rf, N-Ch, 105Vdc, Ni-780H-4L; Drain Source Voltage Vds:105Vdc; Continuous Drain Current Id:-; Power Dissipation Pd:526W; Operating Frequency Min:1.03Ghz; Operating Frequency Max:1.09Ghz; Rf Transistor Case:Ni-780H; No. Ofrohs Compliant: Yes |NXP Semiconductors AFV10700HR5