サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-06-01
Lifecycle StatusObsolete (Last Updated: 9 months ago)
関連部品
onsemiKSB1116GBU
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
説明
NTE Electronics NTE294の詳細は販売業者から提供されます。
Transistor PNP Silicon 60V IC=1A Giant TO-92 Case Audio AMP + Driver Compl To NTE293
NTE Electronics
Transistor, Bipolar, Si, PNP, Audio Amplifier, Power, VCEO 50V, IC 1A, PD 1W, VCBO 60V
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 50V 1A 3-Pin TO-92
Bipolar Transistor, Pnp, -50V To-92; Transistor Polarity:Pnp; Collector Emitter Voltage Max:50V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:200Mhz Rohs Compliant: No |Nte Electronics NTE294
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- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技術仕様
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight7.257478 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)50 V
Emitter Base Voltage (VEBO)5 V
hFE Min120
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation750 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation1 W
Transition Frequency200 MHz
Dimensions
Height8.6106 mm
Length6.0706 mm
Width5.08 mm