サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-03-14
Lifecycle StatusObsolete (Last Updated: 5 months ago)
関連部品
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N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
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Power MOSFET, N Channel, 650 V, 37.9 A, 99 Milliohms, TO-247, 3 Pins, Through Hole
説明
NTE Electronics NTE2376の詳細は販売業者から提供されます。
Power Mosfet N-channel 200V Id=30A TO-247 Case High Speed Switch Enhancement Mode Rds=0.085 Ohm
NTE Electronics
Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247
replacement Transistors TO-247 N-CH 200V 30A
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
N Channel Mosfet, 200V, 30A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; On Resistance Rds(On):0.085Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:-Rohs Compliant: Yes
メーカーの別名
NTE Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NTE Electronics は以下の名前でも知られているかもしれません：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技術仕様
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight72.574779 g
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation190 W
Rise Time86 ns
Threshold Voltage4 V
Turn-Off Delay Time70 ns
Turn-On Delay Time16 ns
Dimensions
Height19.9898 mm
Length15.875 mm
Width5.0038 mm