NTE Electronics NTE2147の詳細は販売業者から提供されます。
INTEGRATED CIRCUIT 4K STATIC RAM(SRAM) 18-LEAD DIP
NTE Electronics
Standard SRAM, 4KX1, 55ns, CMOS, PDIP18
replacement Memory 4K X 1 SRAM 55NS
SRAM Memory IC; Memory Type:MOS SRAM; Interface Type:TTL; Memory Size:4KB; Memory Organization:4K x 1; Access Time, Tacc:55ns; Memory Voltage, Vcc:5V; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Termination Type:Through Hole