サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
説明
NTE Electronics NTE133の詳細は販売業者から提供されます。
Jfet N-channel 25V Idss=.5-15ma TO-106 General Purpose Af AMP
NTE Electronics
Small Signal Field-Effect Transistor, 25V, 1-Element, N-Channel, Silicon, Junction FET, TO-106
TRANSISTOR, JFET, N CHANNEL JFET SILICON, 300 MW, -55 C, 150 C
replacement Transistors TO-106 JFET AF AMP
Trans JFET N-CH 25V Si 3-Pin TO-106
Junction FET [NTE] NTE133 Junction FET 768249030317
JFET NCHAN AF AMP SWITCH TO-106
Gate Source Breakdown Voltage Max:25V; Zero Gate Voltage Drain Current Max:15Ma; Gate Source Cutoff Voltage Max:6.5V; No. Of Pins:3 Pin; Operating Temperature Max:150°C; Channel Type:N Channel; Transistor Mounting:Through Hole; Msl:-Rohs Compliant: Yes |Nte Electronics NTE133
メーカーの別名
NTE Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NTE Electronics は以下の名前でも知られているかもしれません：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技術仕様
Physical
Case/PackageTO-106
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Breakdown Voltage-25 V
Continuous Drain Current (ID)500 µA
Drain to Source Breakdown Voltage-6.5 V
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)-25 V
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 mW
Dimensions
Height4.572 mm
Length88.9 mm
Width5.2832 mm