説明
NTE Electronics NTE129の詳細は販売業者から提供されます。
TRANSISTOR, BIPOLAR, SI, PNP, AMPLIFIER, DRIVER, SWITCH, VCEO 80V, IC 1A, PD 1.25W
Small Signal Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, TO-39
Transistor PNP Silicon 80V IC=1A TO-39 Audio Output Video Driver
NTE Electronics
Trans GP BJT PNP 80V 1A 3-Pin TO-39
BIPOLAR TRANSISTOR, PNP, -80V TO-39; Tra; BIPOLAR TRANSISTOR, PNP, -80V TO-39; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:7W; DC Collector Current:-1A; DC Current Gain hFE:300; No. of Pins:3
メーカーの別名
NTE Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NTE Electronics は以下の名前でも知られているかもしれません：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技術仕様
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight7.257478 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Emitter Base Voltage (VEBO)5 V
hFE Min90
Max Collector Current1 A
Max Frequency400 MHz
Max Operating Temperature200 °C
Max Power Dissipation1 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation1.25 W
Schedule B8541290080
Transition Frequency150 MHz
Dimensions
Diameter9.39 mm
Height6.604 mm
Length152.4 mm
Width76.2 mm