サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-06-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
関連部品
MicrochipJAN2N2222A
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA
説明
NTE Electronics NTE123Aの詳細は販売業者から提供されます。
TRANSISTOR, BIPOLAR, SI, NPN, AUDIO AMPLIFIER, SWITCH, VCEO 40V, IC 800MA, PD 0.4W
Transistor NPN Silicon 75V IC-0.8A TO-18 Audio Amp/Switch
NTE Electronics
RF Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, Very High Frequency Band, Silicon, NPN, TO-18
Bipolar Transistor, Npn, 40V, To-18; Transistor Polarity:Npn; Collector Emitter Voltage Max:40V; Continuous Collector Current:800Ma; Power Dissipation:800Mw; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-; Msl:-Rohs Compliant: Yes |Nte Electronics NTE123A
メーカーの別名
NTE Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NTE Electronics は以下の名前でも知られているかもしれません：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技術仕様
Physical
Body MaterialMetal
Case/PackageTO-18
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight7.257478 g
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)40 V
Emitter Base Voltage (VEBO)6 V
hFE Min100
Max Collector Current800 mA
Max Operating Temperature200 °C
Max Power Dissipation400 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation400 mW
Transition Frequency300 MHz
Dimensions
Diameter5.84 mm
Height5.334 mm
Length152.4 mm
Width76.2 mm