サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-03
Lifecycle StatusObsolete (Last Updated: 9 months ago)
説明
NTE Electronics 2N3019の詳細は販売業者から提供されます。
Transistor NPN Silicon 80V IC=1A TO-39 Case High Current High Frequency Amplifier High Gain
NTE Electronics
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5
500mV@ 500mA,50mA NPN 800mW 7V 10nA 140V 80V 1A TO-39 TH 6.35mm H
Trans GP BJT NPN 80V 1A 3-Pin TO-5
BIPOLAR TRANSISTOR, NPN, 80V; Transistor; BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:400MHz; Power Dissipation Pd:800mW; DC Collector Current:1A; DC Current Gain hFE:300hFE; No. of Pins:3Pins; MSL:-
メーカーの別名
NTE Electronicsは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 NTE Electronics は以下の名前でも知られているかもしれません：
- NTE
- NTE Electronics Inc
- NTE ELECT
- NTE Electronics Incorporated
- NTE ELECTRONICS ACCT
- NTE Electronic Inc
- NTE/EDGE
- NTE/PHILIPS ECG
- NTE 88'S
- PROSPERITY ELECTRONICS CO LTD
- NTE/PEC
- NTE Electronics Inc (use ECG / NTE Electronics)
- NTE-F
技術仕様
Physical
Body MaterialMetal
Case/PackageTO-39
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
hFE Min15
Max Collector Current1 A
Max Operating Temperature200 °C
Max Power Dissipation800 mW
Number of Elements1
PolarityNPN
Power Dissipation5 W
Transition Frequency400 MHz
Voltage Rating (DC)140 V