価格と在庫
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | PBSS5440D,115 | 3,092 | 1 | Cut Tape | ||||||||
| DigiKey | 1727-5775-1-ND | 670 | 1 | Cut Tape | ||||||||
| Avnet | PBSS5440D,115 | 0 | 6K | 2d | ||||||||
| Farnell | PBSS5440D,115 | 3,092 | 1 | Cut Tape | 23h | |||||||
| element14 APAC | PBSS5440D,115 | 3,092 | 1 | Cut Tape | 14h |
サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-04-28
Lifecycle StatusProduction (Last Updated: 2 years ago)
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 2 years ago)
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NXP SemiconductorsPMD9050D,115
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 3-Element, NPN and PNP, Silicon
NXP SemiconductorsPMD9010D,115
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
NXP SemiconductorsPMD9003D,115
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon
説明
Nexperia PBSS5440D,115の詳細は販売業者から提供されます。
Power Bipolar Transistor, 4A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 6 Pin
40 V, 4 A PNP low VCEsat transistor
Trans GP BJT PNP 40V 4A Automotive 6-Pin TSOP T/R
40V 1.1W 4A 30@6A2V 110MHz 320mV@6A600mA PNP +150¡Í@(Tj) SOT-457 Bipolar Transistors - BJT ROHS
450mV@ 600mA,6A PNP 2.5W 5V 100nA 40V 40V 4A TSOP-6 3.1mm*1.7mm*1mm
TRANS PNP 40V 4A LOW SAT SOT457; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency Typ ft:110MHz; Power Dissipation Pd:1.1W; DC Collector Current:-4A; DC Current Gain hFE:200; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-457; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:-60mV; Current Ic Continuous a Max:-500mA; Gain Bandwidth ft Typ:110MHz; Hfe Min:200; Package / Case:SOT-457; Power Dissipation Pd:1.1W; Termination Type:SMD; Transistor Type:Low Saturation (BISS)
メーカーの別名
Nexperiaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Nexperia は以下の名前でも知られているかもしれません：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技術仕様
Physical
Case/PackageTSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Voltage (VCEO)40 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency110 MHz
Gain Bandwidth Product110 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current4 A
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Schedule B8541290080
TerminationSMD/SMT
Transition Frequency110 MHz
Dimensions
Height6.35 mm
Length6.35 mm
Width6.35 mm
コンプライアンス
環境分類
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
準拠ステートメント