サプライチェーン
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1984-10-10
Lifecycle StatusProduction (Last Updated: 9 months ago)
関連部品
ROHM2SC3906KT146R
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon
説明
Nexperia BF822の詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
NPN RF transistor, 20V, 30mA, SOT-23, used for high-frequency amplification and mixer applications in RF circuits
Bipolar (BJT) single-bipolar transistor
50 mA 250 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
メーカーの別名
Nexperiaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Nexperia は以下の名前でも知られているかもしれません：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
技術仕様
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)250 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)250 V
Emitter Base Voltage (VEBO)5 V
hFE Min50
Max Collector Current50 mA
Max Frequency60 MHz
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation250 mW
Transition Frequency60 MHz
Dimensions
Height1 mm
Length3 mm
Width1.4 mm