サプライチェーン
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1984-10-10
Lifecycle StatusProduction (Last Updated: 9 months ago)
関連部品
Diodes Inc.MMBTA42-7-F
Bipolar (BJT) Single Transistor, NPN, 300 V, 500 mA, 300 mW, SOT-23, Surface Mount
説明
Nexperia BF820の詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, NPN, Silicon
50 mA 300 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:300V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:250mW; DC Collector Current:50mA; DC Current Gain hFE:50; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:50mA; Current Ic Continuous a Max:50mA; Current Ic hFE:25mA; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:60MHz; Gain Bandwidth ft Typ:60MHz; Hfe Min:50; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:250mW; Power Dissipation Ptot Max:250mW; SMD Marking:1V; Termination Type:SMD; Voltage Vcbo:300V
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:300V; Continuous Collector Current, Ic:50mA; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:0.25mW ;RoHS Compliant: Yes
メーカーの別名
Nexperiaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Nexperia は以下の名前でも知られているかもしれません：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- Infineon_Nexperia
- NEXPERIA (FORMERLY NXP) (4001801)
技術仕様
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)300 V
Collector Emitter Breakdown Voltage300 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)300 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min50
Max Collector Current50 mA
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation250 mW
Transition Frequency60 MHz
Dimensions
Height1 mm
Length3 mm
Width1.4 mm