サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2004-06-30
説明
Nexperia BC857BWの詳細は販売業者から提供されます。
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
45V 150mW 220@2mA,5V 100mA PNP SOT-323(SC-70) Bipolar Transistors - BJT ROHS
Trans GP BJT PNP 45V 0.1A 3-Pin SC-70 T/R
TRANSISTOR, PNP, 45V, 0.1A, SOT323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:45V; Power Dissipation Pd:200mW; DC Collector Current:100mA; DC Current Gain hFE:220; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-323; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)
メーカーの別名
Nexperiaは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Nexperia は以下の名前でも知られているかもしれません：
- Nexperia USA Inc
- NEXPER
- Nexperia BV
- NXP/NEXPERIA
- Nexperia USA
- NEXP
- Nexperi
- NEXPERIA / NXP
- Nexperia Inc
- Nexperia/NXP Semiconductors
- NEXPERIA(Nexperia)
- NEXPERIA/NXP SEMICONDUCTOR
- Nexperia(Ahn Se)
- Nexperia Semiconductors Taiwan Ltd
- NEXPERIA/N
- NEXPERIA/PHILIPS
- NEXPERIA USA INC (UA)
- NEX-NXP
- NEXPERIA USA INC (VA)
- NEXPERIA (FORMERLY NXP) (4001801)
技術仕様
Physical
Case/PackageSOT-323
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Ambient Temperature Range High150 °C
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Current1 A
Emitter Base Voltage (VEBO)-5 V
Gain Bandwidth Product100 MHz
hFE Min220
Max Collector Current100 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation200 mW
Transition Frequency100 MHz
Voltage45 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm