サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-05-26
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2014-06-16
LTD Date2014-12-12
説明
NEC NP80N055MDG-S18-AYの詳細は販売業者から提供されます。
Compliant Through Hole 7 ns Lead Free 13 ns 6.9 mΩ TO-220-3 3
MOSFET N-CH 55V 80A TO-220
Power Field-Effect Transistor, 80A I(D), 55V, 0.0069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-CHANNEL POWER MOSFET
Power MOSFETs for Automotive
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- NECELEC
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- NEC ELECTRONICS INC
- NEC Electronics America
- NEC RELAYS
- NECC
- NEC COMPOUND SEMICONDUCTOR DEVICES LTD
- NEC Electronics Group
- NEC DISPLAYS
- NEC ELECTR
- NEC DISCRETE SEMICONDUCTORS
- NEC ELECT
- NEC (VA)
- NEC UPD
- NEC (CEL)
- NEC DISPLAY SOLUTIONS OF AMERI
- NEC TOKIN KEMET
- NEC/RENESAS
技術仕様
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance6.9 mΩ
Drain to Source Voltage (Vdss)55 V
Fall Time7 ns
Part FamilyNP80N055MDG
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.9 nF
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.8 W
Rds On Max6.9 mΩ
Rise Time13 ns
Turn-Off Delay Time77 ns
Turn-On Delay Time17 ns
Dimensions
Length10 mm
Width9 mm