サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-04-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-06-01
LTD Date2018-06-01
説明
NEC NE4210S01の詳細は販売業者から提供されます。
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
Trans JFET 4V 70mA GaAs HJFET 4-Pin Case S01 Bulk
Small Signal GaAs FETs Super Lo Noise HJFET
KU BAND Si N-CHANNEL RF SMALL SIGNAL HFET
メーカーの別名
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- NEC ELECTRONICS
- NEC TOKIN
- NEC Corporation
- NEC CORP
- NEC ELECTRONICS CORP
- NEC ELECTRONICS AMERICA INC
- NECELEC
- NEC/TOKIN ELECTRONICS
- NEC DISPLAY SOLUTIONS
- NEC ELECTRONICS INC
- NEC Electronics America
- NEC RELAYS
- NECC
- NEC COMPOUND SEMICONDUCTOR DEVICES LTD
- NEC Electronics Group
- NEC DISPLAYS
- NEC ELECTR
- NEC DISCRETE SEMICONDUCTORS
- NEC ELECT
- NEC (VA)
- NEC UPD
- NEC (CEL)
- NEC DISPLAY SOLUTIONS OF AMERI
- NEC TOKIN KEMET
- NEC/RENESAS
技術仕様
Physical
Case/PackageSMD/SMT
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)15 mA
Current Rating15 mA
Drain to Source Voltage (Vdss)4 V
Frequency12 GHz
Gain11 dB
Gate to Source Voltage (Vgs)-3 V
Max Operating Temperature125 °C
Max Power Dissipation165 mW
Min Breakdown Voltage3 V
Min Operating Temperature-65 °C
Noise Figure0.5 dB
Number of Elements1
PackagingBulk
Test Current10 mA
Test Voltage2 V
Voltage Rating4 V