サプライチェーン
Projected EOL Date2049-02-05
Country of AssemblyPhilippines
Country of FabricationUnited States of America
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.0095
Lifecycle StatusProduction (Last Updated: 22 hours ago)
Manufacturer Lifecycle StatusREL (Last Updated: 22 hours ago)
関連部品
MicrochipJANTX2N3421S
Small Signal Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
説明
Microchip JANTX2N3507の詳細は販売業者から提供されます。
Single Bipolar Transistor, NPN, 50 V, 3 A, 5 W, TO-39 (TO-205-AD), 3 Pins, Through Hole
Power Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-205, Metal, 3 Pin
2N3507 Series 50 V 3 A Through Hole NPN Medium Power Silicon Transistor - TO-39
Trans GP BJT NPN 50V 3A 1000mW 3-Pin TO-39 Bag
メーカーの別名
Microchipは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Microchip は以下の名前でも知られているかもしれません：
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
技術仕様
Physical
Case/PackageTO-39
MountThrough Hole
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)50 V
Emitter Base Voltage (VEBO)5 V
hFE Min35
HS Code8541.21.0095
Max Collector Current3 A
Max Junction Temperature (Tj)200 °C
Max Operating Temperature200 °C
Max Power Dissipation1 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1 W
Schedule B8541210080
Dimensions
Height6.6 mm