サプライチェーン
Projected EOL Date2049-02-05
Country of AssemblyPhilippines
Country of FabricationUnited States of America
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.0095
Lifecycle StatusProduction (Last Updated: 18 hours ago)
Manufacturer Lifecycle StatusREL (Last Updated: 18 hours ago)
関連部品
MicrochipJANTX2N3019S
TRANS NPN 80V 1A TO39 Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-39
説明
Microchip JAN2N3019の詳細は販売業者から提供されます。
TRANS NPN 80V 1A TO39 Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-39
Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin
Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-5AA Tray
80V 1A 800Mw Small-Signal Bjt Tht To-5 Rohs Compliant: Yes |Microchip Technology JAN2N3019
メーカーの別名
Microchipは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Microchip は以下の名前でも知られているかもしれません：
- Microchip Technology
- MICROCHIP TECHNOLOGY INC
- MICROCHI
- MICROC
- MICROCH
- MICROCHIP TECH
- MCHP
- MCRCH
- MCP
- MICROHIP
- MICROSHIP
- MICCHP
- MICROCHP
- MTech
- Microchip Technology / Atmel
- MICROCIHIP
- Microchip Technologies
- Microchip / Microsemi
- MICORCHIP
- MICHROCHIP
- Atmel/Microchip
- MICRIOCHIP
- Atmel (Microchip Technology)
- MICROCHIP (ATMEL)
- MICROCHIP TECHNOLOGY (VA)
- Microchip Technology Inc.
技術仕様
Physical
Case/PackageTO-5
MountThrough Hole
Technical
Collector Base Voltage (VCBO)140 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Emitter Base Voltage (VEBO)7 V
hFE Min50
HS Code8541.21.0095
Max Collector Current1 A
Max Junction Temperature (Tj)200 °C
Max Operating Temperature200 °C
Max Power Dissipation800 mW
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation800 mW
Schedule B8541210080
Dimensions
Height6.6 mm