Transistor MOSFET N-CH 50V 35A 3-Pin (3+Tab) TO-220AB

Power Field-Effect Transistor, 50A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:35A; Package/Case:TO-220AB; Continuous Drain Current - 25 Deg C:35A; Drain-Source Breakdown Voltage:50V ;RoHS Compliant: Yes

Newark

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:60V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:50A; Package / Case:TO-220AB; Power Dissipation Pd:150W; Termination Type:Through Hole; Voltage Vds Typ:50V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC