International Rectifier IRFD020PBF

Trans MOSFET N-CH 50V 2.4A 4-Pin HVMDIP T/R

POWER MOSFET Small Signal Field-Effect Transistor, 2.4A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:50V; Continuous Drain Current, Id:2.4A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:HD-1 ;RoHS Compliant: Yes

MOSFET, N, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:50V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:DIP; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.4A; Current Temperature:25°C; Device Marking:IRFD020PBF; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:DIP; Power Dissipation Pd:1W; Power Dissipation Pd:1W; Pulse Current Idm:19A; Row Pitch:7.62mm; Termination Type:Through Hole; Voltage Vds Typ:50V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V