サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
関連部品
InfineonSPB11N60C3ATMA1
Power MOSFET, N Channel, 650 V, 11 A, 0.34 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB13N60M2
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in D2PAK package
説明
Infineon SPB12N50C3ATMA1の詳細は販売業者から提供されます。
Trans MOSFET N-CH 500V 11.6A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:560V; Current, Id Cont:11.6A; On State Resistance:0.38ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
Replacement for 500V CoolMOS C3 is 500V CoolMOS CE >> Click & go to 500V CoolMOS CE | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-263-3
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11.6 A
Current Rating11.6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance380 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation125 W
Rds On Max380 mΩ
Rise Time8 ns
Turn-Off Delay Time45 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)560 V
コンプライアンス
環境分類
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
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