サプライチェーン
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-08-31
LTD Date2019-02-28
関連部品
onsemiFQB5N60CTM-WS
600V 4.5A 2´Î@10V2.25A 100W 4V@250uA 6.5pF@25V N Channel 515pF@25V 15nC@10V -55¡Í~+150¡Í@(Tj) D2PAK MOSFETs ROHS
説明
Infineon SPB04N60S5ATMA1の詳細は販売業者から提供されます。
MOSFET N-CH 600V 4.5A TO-263 / Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-CH 600V 4A 950mOhm TO263-3
Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance
メーカーの別名
Infineonは世界中でいくつかのブランドを持っており、販売業者が代替名として使用するかもしれません。 Infineon は以下の名前でも知られているかもしれません：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技術仕様
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)4.5 A
Drain to Source Resistance950 mΩ
Drain to Source Voltage (Vdss)600 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance580 pF
Max Dual Supply Voltage600 V
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance950 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation50 W
Rds On Max950 mΩ
Rise Time30 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time55 ns