Infineon SPA07N60C3XKSA1

Power MOSFET, N Channel, 650 V, 7.3 A, 0.54 ohm, TO-220F, Through Hole

Trans MOSFET N-CH 600V 7.3A 3-Pin(3+Tab) TO-220FP

650V 7.3A 32W 600mΩ@10V,4.6A 3.9V@250uA N Channel TO-220F(TO-220IS) MOSFETs ROHS

MOSFET, N, 600V, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:650V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:32W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; Current Id Max:7.3A; Package / Case:TO-220F; Power Dissipation Pd:32W; Power Dissipation Pd:32W; Pulse Current Idm:21.9A; Termination Type:Through Hole; Voltage Vds:650V; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Replacement for 600V CoolMOS C3 is 600V CoolMOS C6/E6 >> Click & go to 600V CoolMOS C6/E6 | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Server; Telecom; Consumer; PC power; Adapter

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 7.3 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) mOhm = 600 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 3.5 / Turn-OFF Delay Time ns = 60 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-220FP / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 32